| PART |
Description |
Maker |
| MHW7292A |
MHW7292A 770 MHz, 29.8 dB Gain, 110-Channel CATV Amplifier Module
|
Motorola
|
| PTFA071701E PTFA071701F |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 鈥?770 MHz
|
Infineon Technologies AG
|
| SE5455-003 |
SE Series GaAs Infrared Emitting Diode, TO-46 Metal Can Package
|
Honeywell Accelerometers
|
| LFCN-575D LFCN-575 |
Low Pass Filter 7 SECTIONS - 7 SECTIONS, 770 MHz, CERAMIC LPF
|
MINI[Mini-Circuits]
http://
|
| ROS-1700W |
Voltage Controlled Oscillator VCO, 770 MHz - 1700 MHz
|
Panduit, Corp.
|
| SID1010CM SID1F10CM SID1K10CM SID1010CXM SID1G10CM |
Infrared LEDs
Infrared LED(For Remote Control)(红外LED（用于远程控制）) 红外发光二极管（对于遥控器）（红外发光二极管（用于远程控制）
Infrared LEDs 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| H24B2 H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
QT[QT Optoelectronics]
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
